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For the Inventor, By the Inventor

Yokkaichi, Japan

Hisakazu Otoi

This inventor holds 18 USPTO granted patents and 1 published patent application. Top assignee: Sandisk Technologies Inc.. Active years: 2018-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hisakazu Otoi. Retrieved from https://idiyas.com/inventor/hisakazu-otoi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 18 

% Patents Active = 94.4

Average Co-Inventor Count = 4.2

ph-index = 9

Forward Citations = 383(Granted Patents)


Company Filing History:

goldMedal18 out of 4,955 
 
Sandisk Technologies Inc.
 patents

Years Active: 2018-2026

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18 patents (USPTO):Explore Patents
1. 12720748 - Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the same (2026-08-25),
2. 12532463 - Three-dimensional memory device with separated source lines and method of making the same (2026-01-20),
3. 11996153 - Three-dimensional memory device with separated contact regions and methods for forming the same (2024-05-28),
4. 11515317 - Three-dimensional memory device including through-memory-level via structures and methods of making the same (2022-11-29),
5. 10985176 - Three-dimensional memory device containing eye-shaped contact via structures located in laterally-undulating trenches and method of making the same (2021-04-20),
6. 10892267 - Three-dimensional memory device containing through-memory-level contact via structures and method of making the same (2021-01-12),
7. 10879262 - Three-dimensional memory device containing eye-shaped contact via structures located in laterally-undulating trenches and method of making the same (2020-12-29),
8. 10707314 - Surround gate vertical field effect transistors including tubular and strip electrodes and method of making the same (2020-07-07),
9. 10629611 - Three-dimensional memory device and methods of making the same using replacement drain select gate electrodes (2020-04-21),
10. 10615172 - Three-dimensional memory device having double-width staircase regions and methods of manufacturing the same (2020-04-07),
11. 10586803 - Three-dimensional memory device and methods of making the same using replacement drain select gate electrodes (2020-03-10),
12. 10516025 - Three-dimensional NAND memory containing dual protrusion charge trapping regions and methods of manufacturing the same (2019-12-24),
13. 10490569 - Three-dimensional memory device and method of making the same using concurrent formation of memory openings and contact openings (2019-11-26),
14. 10490564 - Three-dimensional memory device and methods of making the same using replacement drain select gate electrodes (2019-11-26),
15. 10354987 - Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the same (2019-07-16),

Title: Hisakazu Otoi: Innovator in Three-Dimensional Memory Devices

Introduction

Hisakazu Otoi is a prominent inventor based in Yokkaichi, Japan. He has made significant contributions to the field of memory devices, holding a total of 16 patents. His work focuses on advancing the technology behind three-dimensional memory devices, which are crucial for modern computing.

Latest Patents

Otoi's latest patents include innovative designs for three-dimensional memory devices. One notable patent describes a memory die that features an alternating stack of insulating and electrically conductive layers. This design allows for memory opening fill structures to extend vertically, interlacing memory array regions with contact regions. This interlacing reduces lateral offset of boundaries, enhancing the efficiency of the device. Another patent outlines a three-dimensional memory device that incorporates through-memory-level via structures. This device includes a vertical stack of dielectric plates and conductive via structures that enhance structural support during manufacturing.

Career Highlights

Hisakazu Otoi has built a successful career at Sandisk Technologies Inc., where he has been instrumental in developing cutting-edge memory technologies. His expertise in three-dimensional memory devices has positioned him as a leader in the field. Otoi's innovative approaches have not only advanced the technology but have also contributed to the overall growth of the industry.

Collaborations

Throughout his career, Otoi has collaborated with talented individuals such as Mitsuteru Mushiga and Kenji Sugiura. These collaborations have fostered a creative environment that has led to groundbreaking advancements in memory technology.

Conclusion

Hisakazu Otoi's contributions to the field of memory devices are noteworthy and impactful. His innovative patents and career at Sandisk Technologies Inc. highlight his dedication to advancing technology. Otoi's work continues to influence the future of memory devices and computing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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