The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2022
Filed:
Dec. 07, 2020
Sandisk Technologies Llc, Addison, TX (US);
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Abstract
A memory die includes an alternating stack of insulating layers and electrically conductive layers located between a drain-side dielectric layer and a source-side dielectric layer. Memory openings vertically extend through the alternating stack. Each of the memory openings has a greater lateral dimension an interface with the source-side dielectric layer than at an interface with the drain-side dielectric layer. Memory opening fill structures are located in the memory openings. Each of the memory opening fill structures includes a vertical semiconductor channel, a vertical stack of memory elements, and a drain region. A logic die may be bonded to a source-side dielectric layer side of the memory die.