Yokkaichi, Japan

Kota Funayama

This inventor holds 17 USPTO granted patents and 18 published patent applications, primarily in Three-Dimensional Memory. Top assignees: Sandisk Technologies Inc., Toshiba Memory Corporation. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kota Funayama. Retrieved from https://idiyas.com/inventor/kota-funayama-bekkcoij

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17 

% Patents Active = 94.1

Average Co-Inventor Count = 3.4

ph-index = 8

Forward Citations = 260(Granted Patents)


Location History:

  • Kuwana, JP (2017 - 2018)
  • Yokkaichi, JP (2017 - 2023)

Company Filing History:


Years Active: 2017-2026

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Areas of Expertise:
Three-Dimensional Memory
Etch-Stop Structures
Passivation Layers
Thermal Cycle Control
Memory Array
Source Contact Layer
Multi-Tier Memory
Self-Aligned Structures
Support Pillar Structures
Dielectric Moat
Vertical Resistor
Memory Stack
17 patents (USPTO):Explore Patents

Title: Kota Funayama: Innovator in Three-Dimensional Memory Devices

Introduction

Kota Funayama is a prominent inventor based in Yokkaichi, Japan, known for his significant contributions to the field of memory devices. With a total of 16 patents to his name, Funayama has made remarkable advancements in three-dimensional memory technology.

Latest Patents

His latest patents include a three-dimensional memory device containing etch-stop structures and self-aligned insulating spacers, as well as a method of making the same. This innovative device features contact via openings formed through a retro-stepped dielectric material portion, extending to underlying etch stop structures. The etch stop structures may consist of a stepped conductive or semiconductor etch stop plate, which overlays stepped surfaces in the staircase region. Additionally, electrically conductive layers can be utilized as etch stop structures, allowing for the extension of contact via openings through these layers. Insulating spacers are strategically formed at the peripheral regions of the extended contact via openings, leading to the creation of contact via structures surrounded by these insulating spacers.

Another notable patent involves a three-dimensional memory device with self-aligned etch stop rings for a source contact layer. This memory device comprises a lower source-level semiconductor layer, a source contact layer, an upper source-level semiconductor layer, and an alternating stack of insulating and electrically conductive layers. The memory opening fill structure extends vertically through this stack, featuring a vertical semiconductor channel and a memory film that laterally surrounds it. An annular semiconductor cap is also included, which contacts both the memory film and the source contact layer, serving as an etch stop structure during manufacturing.

Career Highlights

Throughout his career, Funayama has worked with notable companies such as SanDisk Technologies Inc. and Toshiba Memory Corporation. His expertise in memory technology has positioned him as a key player in the industry, contributing to advancements that enhance the performance and efficiency of memory devices.

Collaborations

Funayama has collaborated with esteemed colleagues, including Takeshi Kawamura and Hiroyuki Ogawa, further enriching his work and fostering innovation in the field.

Conclusion

Kota Funayama's contributions to three-dimensional memory technology exemplify his dedication to innovation and excellence. His patents reflect a deep understanding of complex memory systems, paving the way for future advancements in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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