The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 05, 2019
Filed:
Jun. 27, 2017
Sandisk Technologies Llc, Plano, TX (US);
Kabushiki Kaisha Toshiba, Tokyo, JP;
Kota Funayama, Yokkaichi, JP;
Masayuki Fukai, Yokkaichi, JP;
Takaya Yamanaka, Yokkaichi, JP;
Masaki Tsuji, Yokkaichi, JP;
Akira Matsumura, Yokkaichi, JP;
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
A first tier structure is provided by forming first memory openings through a first alternating stack of first insulating layers and first spacer layers, and by forming sacrificial memory opening fill structures in the first memory openings. A second tier structure is formed over the first tier structure by forming a second alternating stack of second insulating layers and second spacer layers. Second memory openings are formed through the second tier structure in areas of the sacrificial memory opening fill structures. Distortion of the first tier structure and misalignment between the first and second memory openings is reduced or prevented by conducting thermal cycles at a lower temperature for the second tier structure than for the first tier structure.