The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2017
Filed:
Aug. 22, 2016
Sandisk Technologies Llc, Plano, TX (US);
Takeshi Kawamura, Yokkaichi, JP;
Kota Funayama, Yokkaichi, JP;
SANDISK TECHNOLOGIES LLC, Plano, TX (US);
Abstract
A first tier structure including a first alternating stack of first insulating layers and first sacrificial material layers is formed over a substrate. First support pillar structures are formed through the first tier structure. A second tier structure including a second alternating stack of second insulating layers and second sacrificial material layers is formed over the first tier structure. Memory stack structures and second support pillar structures are formed through the second tier structure. The first and second sacrificial material layers are replaced with first and second electrically conductive layers while the first support pillar structures, the second support pillar structures, and the memory stack structures provide structural support to the first and second insulating layers. By limiting the spatial extent of the first support pillar structures within the first tier structure, electrical short to backside contact via structures can be reduced.