The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Jul. 26, 2022
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Ryo Nakamura, Yokkaichi, JP;

Naohiro Hosoda, Yokkaichi, JP;

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/535 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, a composite insulating cap layer located over the alternating stack, memory openings vertically extending through the composite insulating cap layer and the alternating stack, and memory opening fill structures located in the memory openings. Each of the memory opening fill structures includes a vertical semiconductor channel and a vertical stack of memory elements. The composite insulating layer includes a bottom insulating cap layer, a top insulating cap layer, and an etch-stop dielectric layer located between the bottom insulating cap layer and the top insulating cap layer.


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