Sandisk Technologies Inc.

Yoko Furihata

Johann Alsmeier

Hiroyuki Ogawa

James K Kai

Jixin Yu

Jin Liu

Fumiaki Toyama

Yuki Mizutani

Yuji Takahashi

Takuya Futase

Naohiro Hosoda

Kota Funayama

Takeshi Kawamura

Satoshi Kamata

A three dimensional NAND memory device includes word line driver devices located on or over a substrate, an alternating stack of word lines and insulating layers located over the word line driver devices, a plurality of memory stack structures extending through the alternating stack, each memory stack structure including a memory film and a vertical semiconductor channel, and through-memory-level via structures which electrically couple the word lines in a first memory block to the word line driver devices. The through-memory-level via structures extend through a through-memory-level via region located between a staircase region of the first memory block and a staircase region of another memory block.

Through-memory-level via structures for a three-dimensional memory device

A first tier structure including a first alternating stack of first insulating layers and first sacrificial material layers is formed over a substrate. First support openings and first memory openings are formed through the first tier structure. A dielectric material portion providing electrical isolation from the substrate is formed in each first memory openings. A second tier structure including a second alternating stack of second insulating layers and second sacrificial material layers is formed the first tier structure. Second support openings and second memory openings are formed through the second tier structure above the first support openings and the first memory openings. Memory stack structures are formed in inter-tier openings formed by adjoining the first and second memory openings. The dielectric material portions provide electrical isolation between the substrate and the vertical semiconductor layers formed within support pillar structures to prevent or reduce electrical shorts to the substrate through the support pillar structures.

Three-dimensional memory device with electrically isolated support pillar structures and method of making thereof

A pattern of parallel lines defines first regions where no conductive material is to be located, a distance between adjacent lines in the first regions being smaller than a predetermined distance, and defines second regions where conductive material is to be located, a distance between adjacent lines in the second regions being larger than the predetermined distance. A subsequent layer caps air gaps between lines in the first regions. Conductive material is then deposited and planarized to form lines of conductive material in the second regions.

Air gaps structures for damascene metal patterning

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Yokkaichi, Japan

Yoko Furihata