The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2017

Filed:

May. 15, 2015
Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventors:

Shunsuke Akimoto, Yokkaichi, JP;

Hidetoshi Nakamoto, Yokkaichi, JP;

Keita Kumamoto, Yokkaichi, JP;

Hidehito Koseki, Yokkaichi, JP;

Yuji Takahashi, Yokkaichi, JP;

Noritaka Fukuo, Yokkaichi, JP;

Tomoyasu Kakegawa, Yokkaichi, JP;

Takuya Futase, Yokkaichi, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/40 (2006.01); H01L 21/44 (2006.01); H01L 21/336 (2006.01); H01L 27/11524 (2017.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11524 (2013.01); H01L 29/66825 (2013.01);
Abstract

An initial etch forms a trench over first contact areas of a plurality of NAND strings, the initial etch also forming individual openings over second contact areas of the plurality of NAND strings. Material is added in the trench to reduce an area of exposed bottom surface of the trench while maintaining the individual openings without substantial reduction of bottom surface area. Subsequent further etching extends the trench and the plurality of individual openings.


Find Patent Forward Citations

Loading…