The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Sep. 08, 2015
Applicant:
Sandisk Technologies Inc., Plano, TX (US);
Inventors:
Katsuo Yamada, Yokkaichi, JP;
Yuji Takahashi, Yokkaichi, JP;
Noritaka Fukuo, Yokkaichi, JP;
Masami Uozaki, Yokkaichi, JP;
Kiyokazu Shishido, Yokkaichi, JP;
Takuya Futase, Yokkaichi, JP;
Shunsuke Watanabe, Yokkaichi, JP;
Assignee:
SANDISK TECHNOLOGIES INC., Plano, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 27/112 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11293 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01);
Abstract
A wide trench having a width Wand narrow trenches having a width Wthat is less than Ware formed in a dielectric layer, the wide trench extending deeper in outer regions than in a central region. A trench modification step changes the width of the wide trench and reduces a depth difference between the outer regions and the central region of the wide trench.