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For the Inventor, By the Inventor

Yokkaichi, Japan

Kiyokazu Shishido

This inventor holds 16 USPTO granted patents and 9 published patent applications. Top assignee: Sandisk Technologies Inc.. Active years: 2016-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kiyokazu Shishido. Retrieved from https://idiyas.com/inventor/kiyokazu-shishido

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 16 

% Patents Active = 100.0

Average Co-Inventor Count = 4.1

ph-index = 6

Forward Citations = 109(Granted Patents)


Company Filing History:

goldMedal16 out of 4,962 
 
Sandisk Technologies Inc.
 patents

Years Active: 2016-2025

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16 patents (USPTO):Explore Patents
1. 12457786 - High voltage field effect transistors with different sidewall spacer configurations and method of making the same (2025-10-28),
2. 12426354 - Field effect transistors with reduced gate fringe area and method of making the same (2025-09-23),
3. 12032837 - Non-volatile memory with reduced word line switch area (2024-07-09),
4. 11876096 - Field effect transistors with reduced gate fringe area and method of making the same (2024-01-16),
5. 11710740 - Field effect transistors with reduced gate fringe area and method of making the same (2023-07-25),
6. 11069707 - Variable die size memory device and methods of manufacturing the same (2021-07-20),
7. 10804284 - Three-dimensional memory device containing bidirectional taper staircases and methods of making the same (2020-10-13),
8. 10770459 - CMOS devices containing asymmetric contact via structures (2020-09-08),
9. 10515907 - Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same (2019-12-24),
10. 10515897 - Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same (2019-12-24),
11. 10355017 - CMOS devices containing asymmetric contact via structures and method of making the same (2019-07-16),
12. 10256099 - Transistors having semiconductor-metal composite gate electrodes containing different thickness interfacial dielectrics and methods of making thereof (2019-04-09),
13. 9607997 - Metal line with increased inter-metal breakdown voltage (2017-03-28),
14. 9524904 - Early bit line air gap formation (2016-12-20),
15. 9478461 - Conductive line structure with openings (2016-10-25),

Title: The Innovative Journey of Kiyokazu Shishido

Introduction: Kiyokazu Shishido, a pioneering inventor hailing from Yokkaichi, Japan, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Kiyokazu Shishido's latest patents include advancements in renewable energy technology, specifically in the field of solar power efficiency and storage solutions.

Career Highlights: With a career spanning over two decades, Shishido has been at the forefront of developing cutting-edge solutions for sustainable energy sources. His work has been recognized globally for its impact on environmental conservation and technological advancement.

Collaborations: Throughout his career, Kiyokazu Shishido has collaborated with leading research institutions and universities to further his research and bring his inventions to life. His partnerships have been instrumental in pushing the boundaries of innovation in the renewable energy sector.

Conclusion: Kiyokazu Shishido's relentless pursuit of innovation and commitment to creating a more sustainable future have solidified his position as a visionary inventor in the field of renewable energy technology. His contributions continue to inspire the next generation of inventors and pave the way for a greener tomorrow.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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