The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2019
Filed:
May. 17, 2018
Applicant:
Sandisk Technologies Llc, Plano, TX (US);
Inventors:
Assignee:
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/522 (2006.01); H01L 27/11556 (2017.01); H01L 21/768 (2006.01); H01L 27/1157 (2017.01); H01L 27/11524 (2017.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 23/564 (2013.01); H01L 21/76802 (2013.01); H01L 23/5226 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract
A semiconductor structure includes a semiconductor device, an overlying silicon nitride diffusion barrier layer, and an interconnect structure extending through the silicon nitride diffusion barrier layer. The interconnect structure includes a titanium diffusion barrier structure in contact with the silicon nitride diffusion barrier layer to form a continuous hydrogen diffusion barrier structure.
Fujita, Takahito. (2019). Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same (U.S. Patent No. 10515907). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10515907
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile