The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2021

Filed:

Oct. 29, 2019
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Tomoka Tanabe, Yokkaichi, JP;

Hiroyuki Ogawa, Nagoya, JP;

Kiyokazu Shishido, Yokkaichi, JP;

Takahito Fujita, Yokkaichi, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11556 (2017.01); H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 29/788 (2006.01); H01L 23/00 (2006.01); H01L 25/18 (2006.01); H01L 21/02 (2006.01); H01L 25/00 (2006.01); H01L 21/768 (2006.01); H01L 27/11519 (2017.01); H01L 27/11565 (2017.01); H01L 21/311 (2006.01); H01L 21/82 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/02164 (2013.01); H01L 21/31111 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/82 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 24/05 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H01L 27/11519 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 29/7883 (2013.01); H01L 21/02208 (2013.01); H01L 21/02271 (2013.01); H01L 2224/0557 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01);
Abstract

A semiconductor die includes alternating stacks of insulating layers and electrically conductive layers that are laterally separated from each other by first backside trenches that laterally extend along a first horizontal direction, an array of memory stack structures vertically extending through the alternating sacks, an inner edge seal structure that continuously laterally surrounds the alternating stacks, an outer edge seal structure that continuously laterally surrounds the inner edge seal structure, and additional alternating stacks of insulating layers and electrically conductive layers located between the inner edge seal structure and the outer edge seal structure.


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