The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 16, 2024
Filed:
Oct. 07, 2021
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Assignee:
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/266 (2013.01); H01L 21/26513 (2013.01); H01L 21/823814 (2013.01); H01L 21/823864 (2013.01); H01L 21/823878 (2013.01); H01L 29/4983 (2013.01); H01L 29/66492 (2013.01); H01L 29/7833 (2013.01);
Abstract
A semiconductor structure includes at least two field effect transistors. A gate strip including a plurality of gate dielectrics and a gate electrode strip can be formed over a plurality of semiconductor active regions. Source/drain implantation is conducted using the gate strip as a mask. The gate strip is divided into gate electrodes after the implantation.