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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10515897 B1

PDFFull Text
Date of Patent:
Dec. 24, 2019

Filed:

May. 17, 2018

Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same

Applicant:

Sandisk Technologies Llc, Plano, TX (US);

Inventors:

Masatoshi Nishikawa, Yokkaichi, JP;

Akio Nishida, Yokkaichi, JP;

Murshed Chowdhury, Fremont, CA (US);

Takahito Fujita, Yokkaichi, JP;

Kiyokazu Shishido, Yokkaichi, JP;

Hiroyuki Ogawa, Nagoya, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:

The Marbury Law Group, PLLC

Primary Examiner:

Didarul A Mazumder

Assistant Examiner:

Wasiul Haider

Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 23/532 (2006.01); H01L 27/1157 (2017.01); H01L 27/11582 (2017.01); H01L 27/11573 (2017.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5329 (2013.01); H01L 21/76843 (2013.01); H01L 23/5226 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 27/1157 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01);
Abstract

A semiconductor structure includes a semiconductor device, an overlying silicon nitride diffusion barrier layer, and an interconnect structure extending through the silicon nitride diffusion barrier layer. The interconnect structure includes a titanium diffusion barrier structure in contact with the silicon nitride diffusion barrier layer to form a continuous hydrogen diffusion barrier structure.

Find Patent Forward Citations

Nishikawa, Masatoshi. (2019). Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the same (U.S. Patent No. 10515897). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10515897

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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