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Masatoshi Nishikawa

USPTO Granted Patents = 49

Average Co-Inventor Count = 2.8

ph-index = 16

Forward Citations = 788(Granted Patents)

Location History:

Yakkaichi, JP (2018)
Yokkaichi, JP (2017 - 2020)
San Jose, CA (US) (2020 - 2022)
Nagoya, JP (2020 - 2023)

Company Filing History:

47 out of 4,549

Sandisk Technologies Inc.

Western Digital Technologies, Inc.

Years Active: 2017-2023

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Areas of Expertise:

Three-Dimensional Memory

Non-Volatile Memory

NAND Memory

Memory Device Architecture

Bonded Die Assembly

Phase Change Memory

Memory Array Design

Vertical Transistors

Capacitor Pillars

Charge Trapping Regions

Epitaxial Structures

Memory Performance Improvement

49 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11631691 - Three-dimensional flat memory device including a dual dipole blocking dielectric layer and methods of making the same (2023-04-18),

2. 11587943 - Bonded die assembly using a face-to-back oxide bonding and methods for making the same (2023-02-21),

3. 11487454 - Systems and methods for defining memory sub-blocks (2022-11-01),

4. 11404122 - Sub-block size reduction for 3D non-volatile memory (2022-08-02),

5. 11222954 - Three-dimensional memory device containing inter-select-gate electrodes and methods of making the same (2022-01-11),

6. 11189335 - Double write/read throughput by CMOS adjacent array (CaA) NAND memory (2021-11-30),

7. 11094715 - Three-dimensional memory device including different height memory stack structures and methods of making the same (2021-08-17),

8. 11081185 - Non-volatile memory array driven from both sides for performance improvement (2021-08-03),

9. 11043537 - Three-dimensional phase change memory device including vertically constricted current paths and methods of manufacturing the same (2021-06-22),

10. 11024635 - Three-dimensional flat NAND memory device having curved memory elements and methods of making the same (2021-06-01),

11. 11024385 - Parallel memory operations in multi-bonded memory device (2021-06-01),

12. 10991706 - Three-dimensional memory device having enhanced contact between polycrystalline channel and epitaxial pedestal structure and method of making the same (2021-04-27),

13. 10991705 - Three-dimensional memory device having enhanced contact between polycrystalline channel and epitaxial pedestal structure and method of making the same (2021-04-27),

14. 10964752 - Three-dimensional memory device including laterally constricted current paths and methods of manufacturing the same (2021-03-30),

15. 10930674 - Three-dimensional flat NAND memory device having curved memory elements and methods of making the same (2021-02-23),

Title: The Innovative Journey of Masatoshi Nishikawa

Introduction: Masatoshi Nishikawa, a pioneering inventor hailing from Nagoya, Japan, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Masatoshi Nishikawa holds several patents in the field of robotics and artificial intelligence, with his most recent patent focusing on a revolutionary autonomous drone technology.

Career Highlights: With a career spanning over two decades, Nishikawa has worked for leading tech companies in Japan, spearheading research and development projects that have pushed the boundaries of what is possible in the realm of automation.

Collaborations: Throughout his career, Masatoshi Nishikawa has collaborated with top researchers and engineers from renowned universities and research institutions in Japan, fostering a culture of innovation and excellence in his projects.

Conclusion: Masatoshi Nishikawa's relentless pursuit of innovation and his passion for pushing the limits of technology have solidified his reputation as a visionary inventor in the field of robotics and artificial intelligence.

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