The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Jun. 13, 2019
Western Digital Technologies, Inc., San Jose, CA (US);
Yuji Takahashi, San Jose, CA (US);
Masatoshi Nishikawa, Nagoya, JP;
Wei Kuo Shih, Cupertino, CA (US);
WESTERN DIGITAL TECHNOLOGIES, INC., San Jose, CA (US);
Abstract
A vertically alternating sequence of insulating layers and sacrificial material layers is formed over a substrate. Line trenches extending along a first horizontal direction are formed through the vertically alternating sequence. The vertically alternating sequence is divided into vertically alternating stacks of insulating strips and sacrificial material strips. Laterally alternating sequences of memory opening fill structures and dielectric pillar structures are formed within the line trenches. Each of the memory opening fill structures includes a respective vertical bit line and memory material portion located between each laterally neighboring pair of the sacrificial material strip and the vertical bit line. A lateral extent of an overlap between the memory material portion and a most proximal one of the sacrificial material strips along the first horizontal direction is less than a lateral extent along the first horizontal direction of the memory opening fill structure containing the memory material portion. The sacrificial material strips are replaced with electrically conductive strips.