Cupertino, CA, United States of America

Wei Kuo Shih

This inventor holds 6 USPTO granted patents. Top assignees: Sandisk Technologies Inc., Western Digital Technologies, Inc.. Active years: 2020-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wei Kuo Shih. Retrieved from https://idiyas.com/inventor/wei-kuo-shih-cyev274b

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 83.3

Average Co-Inventor Count = 2.6

ph-index = 3

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 2020-2021

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6 patents (USPTO):Explore Patents

Title: Innovations of Wei Kuo Shih

Introduction

Wei Kuo Shih is a prominent inventor based in Cupertino, CA, known for his contributions to the field of memory devices. He holds a total of 6 patents, showcasing his innovative approach to technology and engineering.

Latest Patents

One of his latest patents is titled "Three-dimensional phase change memory device including vertically constricted current paths and methods of manufacturing the same." This invention involves forming an alternating stack of insulating layers and sacrificial material layers over a substrate. Memory openings are created through this stack, with protruding tip portions formed on each sacrificial layer around the memory openings. Insulating spacers are then established within each memory opening, and a phase change memory material along with a vertical bit line is formed within these openings. The phase change memory material can be structured as a vertical stack of discrete annular portions or as a continuous layer. Additionally, each sacrificial material layer can be substituted with an electrically conductive layer.

Another significant patent is the "Multi-level loop cut process for a three-dimensional memory device using pitch-doubled metal lines." This invention begins with the formation of elongated loop-shaped conductive material portions over a substrate. A two-dimensional array of memory pillar structures is then established over these conductive portions. Second elongated loop-shaped conductive material portions are placed over the array, with each portion comprising a pair of line segments and end segments. A moat trench is created through an anisotropic etch process, which partially encloses the memory pillar structures and separates each loop-shaped conductive material portion into disjoined segments.

Career Highlights

Wei Kuo Shih has worked with notable companies such as Western Digital Technologies, Inc. and SanDisk Technologies Inc. His experience in these organizations has significantly contributed to his expertise in memory technology and innovation.

Collaborations

Throughout his career, Wei Kuo Shih has collaborated with esteemed colleagues, including Yuji Takahashi and Masatoshi Nishikawa. These partnerships have fostered a creative environment that has led to groundbreaking advancements in memory devices.

Conclusion

Wei Kuo Shih's innovative work in the field of memory technology has resulted in several patents that push the boundaries of what is possible in data storage. His contributions continue to influence the industry and inspire future innovations.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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