Yokkaichi, Japan

Akio Nishida

This inventor holds 39 USPTO granted patents and 6 published patent applications, primarily in Three-Dimensional Memory. Top assignees: Sandisk Technologies Inc., Western Digital Technologies, Inc.. Active years: 2016-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Akio Nishida. Retrieved from https://idiyas.com/inventor/akio-nishida-kbbdtgwg

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 39 

% Patents Active = 94.9

Average Co-Inventor Count = 3.0

ph-index = 15

Forward Citations = 936(Granted Patents)


Location History:

  • Nagoya, JP (2016 - 2021)
  • Yokkaichi, JP (2019 - 2024)

Company Filing History:


Years Active: 2016-2024

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Areas of Expertise:
Three-Dimensional Memory
Device Fabrication
Bonded Structures
Vertical Interconnections
Memory Die Module
Support Die
Oxide Bonding
Charge Trapping
Hydrogen Diffusion
Performance Optimization
Stress Control
Nonvolatile Memory
39 patents (USPTO):Explore Patents

Title: Akio Nishida: Innovator in Three-Dimensional Memory Technology

Introduction: Akio Nishida, a prominent inventor based in Yokkaichi, Japan, has made significant strides in the field of semiconductor memory technology. With an impressive portfolio of 39 patents, he has contributed to the advancement of three-dimensional memory devices, showcasing his innovative mindset and technical expertise.

Latest Patents: Nishida's latest patents embody advanced techniques for the fabrication of three-dimensional memory devices. One noteworthy patent titled "Three Dimensional Memory Device and Method of Making Thereof by Forming Channel and Memory Film After Word Line Replacement" outlines a comprehensive method for creating a memory device. This involves an intricate process that includes the formation of insulating and sacrificial layers, a memory opening, and the precise replacement of materials to create a memory film and vertical semiconductor channel.

Another significant patent, "Three-Dimensional Memory Device with Isolated Source Strips and Method of Making the Same," describes a memory die featuring source-select-level electrically conductive strips, which are strategically spaced apart by dielectric isolation structures. This design enhances the performance and reliability of the memory devices, making them more efficient for various applications.

Career Highlights: Throughout his career, Akio Nishida has worked with reputable companies in the technology sector. Notably, he has been associated with SanDisk Technologies Inc. and Western Digital Technologies, Inc., where he further honed his skills and contributed to cutting-edge memory solutions.

Collaborations: Nishida has collaborated with talented individuals in his field, including Mitsuteru Mushiga and Masatoshi Nishikawa. These partnerships have allowed for the sharing of knowledge and expertise, fostering an environment of innovation and creativity in the development of new technologies.

Conclusion: Akio Nishida's dedication to innovation and excellence in the field of three-dimensional memory technology has positioned him as a notable figure among inventors. His extensive patent portfolio and collaborative efforts showcase the impact of his work on the future of memory devices, ultimately contributing to technological advancements that benefit various industries.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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