The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Nov. 18, 2020
Sandisk Technologies Llc, Addison, TX (US);
Masanori Tsutsumi, Yokkaichi, JP;
Shinsuke Yada, Yokkaichi, JP;
Mitsuteru Mushiga, Yokkaichi, JP;
Akio Nishida, Yokkaichi, JP;
Hiroyuki Ogawa, Yokkaichi, JP;
Teruo Okina, Yokkaichi, JP;
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Abstract
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over at least one source layer, and groups of memory opening fill structures vertically extending through the alternating stack. Each memory opening fill structure can include a vertical stack of memory elements and a vertical semiconductor channel. A plurality of source-side select gate electrodes can be laterally spaced apart by source-select-level dielectric isolation structures. Alternatively or additionally, the at least one source layer may include a plurality of source layers. A group of memory opening fill structures can be selected by selecting a source layer and/or by selecting a source-level electrically conductive layer.