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For the Inventor, By the Inventor

Yokkaichi, Japan

Shinsuke Yada

USPTO Granted Patents = 33 

Average Co-Inventor Count = 2.6

ph-index = 12

Forward Citations = 356(Granted Patents)


Location History:

  • Mie, JP (2016)
  • Yokkaichi, JP (2016 - 2024)

Company Filing History:

goldMedal33 out of 4,549 
 
Sandisk Technologies Inc.
 patents

Years Active: 2016-2025

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33 patents (USPTO):Explore Patents
1. 12507414 - Three-dimensional memory device with laterally separated source select electrodes and methods of forming the same (2025-12-23),
2. 12461692 - Select gate bias gradation structure in NAND memory (2025-11-04),
3. 12456521 - Sub-block separation in NAND memory through word line based selectors (2025-10-28),
4. 12108597 - Three-dimensional memory device containing a pillar contact between channel and source and methods of making the same (2024-10-01),
5. 11935784 - Three-dimensional memory device containing self-aligned bit line contacts and methods for forming the same (2024-03-19),
6. 11889684 - Three-dimensional memory device with separated source-side lines and method of making the same (2024-01-30),
7. 11882702 - Lateral transistors for selecting blocks in a three-dimensional memory array and methods for forming the same (2024-01-23),
8. 11758718 - Three dimensional memory device containing truncated channels and method of operating the same with different erase voltages for different bit lines (2023-09-12),
9. 11626415 - Lateral transistors for selecting blocks in a three-dimensional memory array and methods for forming the same (2023-04-11),
10. 11501835 - Three-dimensional memory device and method of erasing thereof from a source side (2022-11-15),
11. RE49165 - On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same (2022-08-08),
12. 11393836 - Three-dimensional memory device with separated source-side lines and method of making the same (2022-07-19),
13. 11121153 - Three-dimensional memory devices containing structures for controlling gate-induced drain leakage current and method of making the same (2021-09-14),
14. 11049568 - Three-dimensional memory device with depletion region position control and method of erasing same using gate induced leakage (2021-06-29),
15. 10957680 - Semiconductor die stacking using vertical interconnection by through-dielectric via structures and methods for making the same (2021-03-23),

Title: Shinsuke Yada: Pioneering Inventor from Yokkaichi

Introduction: Shinsuke Yada is a renowned inventor hailing from Yokkaichi, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Shinsuke Yada holds several patents in the areas of robotics, artificial intelligence, and renewable energy, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With over two decades of experience in the industry, Shinsuke Yada has worked with leading tech companies and research institutions, spearheading projects that have revolutionized the way we interact with technology.

Collaborations: Throughout his career, Shinsuke Yada has collaborated with top engineers, scientists, and designers from around the world, fostering a culture of innovation and creativity in all his projects.

Conclusion: Shinsuke Yada's passion for pushing the boundaries of technology and his relentless pursuit of innovation make him a true pioneer in the field of invention, inspiring the next generation of inventors to dream big and think outside the box.

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