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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12677414 B1

PDFFull Text
Date of Patent:
Jul. 07, 2026

Filed:

Jul. 10, 2023

Three-dimensional memory device including horizontal semiconductor channels and methods of forming the same

Applicant:

Western Digital Technologies, Inc., San Jose, CA (US);

Inventors:

Takaaki Iwai, Nagoya, JP;

Shinsuke Yada, Yokkaichi, JP;

Tadashi Nakamura, Yokkaichi, JP;

Hiroyuki Ogawa, Nagoya, JP;

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:

THE MARBURY LAW GROUP PLLC

Primary Examiner:

William B Partridge

Assistant Examiner:

David Paul Sedorook

Int. Cl.
CPC ...
H10B 41/27 (2023.01); G11C 16/04 (2006.01); H10B 41/10 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H10W 20/41 (2026.01); H10W 20/42 (2026.01);
U.S. Cl.
CPC ...
H10B 41/27 (2023.02); G11C 16/0483 (2013.01); H10B 41/10 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H10W 20/42 (2026.01); H10W 20/435 (2026.01);
Abstract

A method of forming three-dimensional memory device includes forming an alternating stack of insulating layers and semiconductor material layers over a substrate, and forming laterally alternating sequences of laterally-insulated electrode structures and dielectric isolation pillar structures through the alternating stack. At least a portion of the laterally-insulated electrode structures each include a memory film and a word line electrode.

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Quick Actions:

Iwai, Takaaki. (2026). Three-dimensional memory device including horizontal semiconductor channels and methods of forming the same (U.S. Patent No. 12677414). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12677414

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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