The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Jul. 31, 2023
Applicant:
Western Digital Technologies, Inc., San Jose, CA (US);
Inventor:
Shinsuke Yada, Yokkaichi, JP;
Assignee:
Sandisk Technologies, Inc., Milpitas, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H01L 23/00 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2023.01); H01L 25/18 (2023.01); H10B 43/35 (2023.01); H10B 80/00 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H01L 24/08 (2013.01); H01L 24/80 (2013.01); H01L 25/0657 (2013.01); H01L 25/18 (2013.01); H01L 25/50 (2013.01); H10B 43/35 (2023.02); H10B 80/00 (2023.02); H01L 2224/08145 (2013.01); H01L 2224/80006 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01); H01L 2924/1431 (2013.01); H01L 2924/14511 (2013.01);
Abstract
A three-dimensional memory device includes primary source side select gate electrodes located between word lines and bottom source side select gate electrodes. The primary source side select gate electrodes are laterally separated in each memory block, while the word lines and the bottom source side select gate electrodes are not laterally separated in each memory block.
Quick Actions:
Yada, Shinsuke. (2025). Three-dimensional memory device with laterally separated source select electrodes and methods of forming the same (U.S. Patent No. 12507414). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12507414
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