The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2017
Filed:
Oct. 21, 2014
Applicant:
Sandisk Technologies Llc, Plano, TX (US);
Inventors:
Katsuo Yamada, Yokkaichi, JP;
Yuji Takahashi, Yokkaichi, JP;
Takuya Futase, Yokkaichi, JP;
Noritaka Fukuo, Yokkaichi, JP;
Tomoyasu Kakegawa, Yokkaichi, JP;
Assignee:
SANDISK TECHNOLOGIES LLC, Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/308 (2006.01); H01L 27/11521 (2017.01); H01L 21/762 (2006.01); H01L 21/28 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3083 (2013.01); H01L 21/76224 (2013.01); H01L 27/11521 (2013.01); H01L 21/02255 (2013.01); H01L 21/28273 (2013.01);
Abstract
Isolation is provided by forming a first trench, depositing a cover layer on the bottom and sidewalls of the first trench, selectively removing the cover layer from the bottom and forming a second trench extending from the bottom of the first trench. The second trench is then substantially filled by thermal oxide formed by oxidation and the first trench is subsequently filled with a deposited dielectric.