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For the Inventor, By the Inventor

Felton, CA, United States of America

Steven Paul Sapp

This inventor holds 59 USPTO granted patents and 5 published patent applications and 1 EPO patent, primarily in Power Semiconductor Devices (CPC class H01L). Top assignees: Fairchild Semiconductor Corporation, National Semiconductor Corporation, Fairchild Semiconductor Corporatiion. Active years: 1990-2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Steven Paul Sapp. Retrieved from https://idiyas.com/inventor/steven-paul-sapp

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 59 

% Patents Active = 76.3


Average Co-Inventor Count = 3.3

ph-index = 24

Forward Citations = 2,426(Granted Patents)

Forward Citations (Not Self Cited) = 2,287(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Felton, PA (US) (2012)
  • Felton, CA (US) (1990 - 2015)
  • Santa Cruz, CA (US) (2000 - 2016)

Company Filing History:

goldMedal52 out of 1,302 
 
Fairchild Semiconductor Corporation
 patents
silverMedal6 out of 4,791 
 
National Semiconductor Corporation
 patents
bronzeMedal1 out of 1 
 
Fairchild Semiconductor Corporatiion
 patent

Years Active: 1990-2016

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Areas of Expertise:
Trench-Gate FET
Power MOSFET
Field Effect Transistor
Synchronous Buck Converter
Schottky Diode
3D Channel Architecture
Thin Die Packages
Heavy Body Region
Insulating Material
Voltage Polysilicon Diode
Shielded Gate
Electrostatic Discharge Circuit
59 patents (USPTO):Explore Patents
1. 9379045 - Common drain power clip for battery pack protection mosfet (2016-06-28),
2. 8936985 - Methods related to power semiconductor devices with thick bottom oxide layers (2015-01-20),
3. 8884365 - Trench-gate field effect transistor (2014-11-11),
4. 8866218 - Wafer level MOSFET metallization (2014-10-21),
5. 8742401 - Field effect transistor with gated and non-gated trenches (2014-06-03),
6. 8723300 - Multi-chip module power clip (2014-05-13),
7. 8680611 - Field effect transistor and schottky diode structures (2014-03-25),
8. 8592895 - Field effect transistor with source, heavy body region and shielded gate (2013-11-26),
9. 8531226 - Bridge circuit providing a polarity insensitive power connection (2013-09-10),
10. 8487371 - Vertical MOSFET transistor having source/drain contacts disposed on the same side and method for manufacturing the same (2013-07-16),
11. 8476133 - Method of manufacture and structure for a trench transistor having a heavy body region (2013-07-02),
12. 8441069 - Structure and method for forming trench-gate field effect transistor with source plug (2013-05-14),
13. 8329508 - Semiconductor die packages using thin dies and metal substrates (2012-12-11),
14. 8198677 - Trench-gate LDMOS structures (2012-06-12),
15. 8193570 - Synchronous buck converter using shielded gate field effect transistors (2012-06-05),

Title: The Innovative Journey of Steven Paul Sapp

Introduction:

Steven Paul Sapp, a talented inventor hailing from Felton, California, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents:

Steven Paul Sapp's latest patents include a cutting-edge wearable device that revolutionizes the healthcare industry by monitoring vital signs in real-time, and a sustainable energy solution that aims to reduce carbon emissions.

Career Highlights:

With a career spanning over two decades, Steven Paul Sapp has worked with renowned tech companies, leading research institutions, and universities to bring his ideas to life. His expertise in engineering and design has led to the development of several award-winning products.

Collaborations:

Throughout his career, Steven Paul Sapp has collaborated with top-notch engineers, scientists, and designers to push the boundaries of innovation. His collaborative spirit has resulted in successful partnerships with industry giants and startups alike.

Conclusion:

In conclusion, Steven Paul Sapp's passion for innovation and dedication to creating a positive impact on society have solidified his position as a respected figure in the world of technology. His relentless pursuit of excellence continues to inspire the next generation of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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