The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 21, 2014

Filed:

Jun. 14, 2013
Applicant:

Fairchild Semiconductor Corporation, South Portland, ME (US);

Inventors:

Daniel M. Kinzer, El Segundo, CA (US);

Steven Sapp, Felton, CA (US);

Chung-Lin Wu, San Jose, CA (US);

Oseob Jeon, Seoul, KR;

Bigidis Dosdos, San Jose, CA (US);

Assignee:

Fairchild Semiconductor Corporation, South Portland, ME (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 23/62 (2006.01); H01L 23/02 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 2924/01033 (2013.01); H01L 2224/131 (2013.01); H01L 29/66666 (2013.01); H01L 2924/01029 (2013.01); H01L 24/13 (2013.01); H01L 2924/014 (2013.01); H01L 2924/13091 (2013.01); H01L 29/7813 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/09701 (2013.01); H01L 29/41766 (2013.01); H01L 2924/13055 (2013.01); H01L 29/7809 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01047 (2013.01);
Abstract

In one general aspect, a system can include a through-silicon-via (TSV) coupling a drain region associated with a vertical transistor to a back metal disposed on a second side of the substrate opposite the first side. The system can include a first metal layer, and a second metal layer aligned orthogonal to the first metal layer. The system can define a conduction path extending substantially vertically through the TSV to the substrate and laterally through the substrate.


Find Patent Forward Citations

Loading…