The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Jan. 11, 2010
Brian Sze-ki MO, Fremont, CA (US);
Duc Chau, San Jose, CA (US);
Steven Sapp, Felton, CA (US);
Izak Bencuya, Saratoga, CA (US);
Dean Edward Probst, West Jordan, UT (US);
Brian Sze-Ki Mo, Fremont, CA (US);
Duc Chau, San Jose, CA (US);
Steven Sapp, Felton, CA (US);
Izak Bencuya, Saratoga, CA (US);
Dean Edward Probst, West Jordan, UT (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.