The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
May. 10, 2013
Fairchild Semiconductor Corporation, South Portland, ME (US);
Hamza Yilmaz, Saratoga, CA (US);
Daniel Calafut, San Jose, CA (US);
Christopher Boguslaw Kocon, Mountaintop, PA (US);
Steven P. Sapp, Santa Cruz, CA (US);
Dean E. Probst, West Jordan, UT (US);
Nathan L. Kraft, Pottsville, PA (US);
Thomas E. Grebs, Mountaintop, PA (US);
Rodney S. Ridley, Scarborough, ME (US);
Gary M. Dolny, Mountaintop, PA (US);
Bruce D. Marchant, Murray, UT (US);
Joseph A. Yedinak, Mountaintop, PA (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A field effect transistor (FET) includes a body region of a first conductivity type disposed within a semiconductor region of a second conductivity type and a gate trench extending through the body region and terminating within the semiconductor region. The FET also includes a flared shield dielectric layer disposed in a lower portion of the gate trench, the flared shield dielectric layer including a flared portion that extends under the body region. The FET further includes a conductive shield electrode disposed in the trench and disposed, at least partially, within the flared shield dielectric.