Enter inventor name

Mountain Top, PA, United States of America

Thomas E Grebs

USPTO Granted Patents = 40 (Patent Applications = 3)

Average Co-Inventor Count = 2.9

ph-index = 15

Forward Citations = 1,001(Granted Patents)

Location History:

Mountaintop, PA (US) (1999 - 2014)
South Jordan, UT (US) (2012 - 2014)

Company Filing History:

35 out of 1,302

Fairchild Semiconductor Corporation

Years Active: 1999-2014

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Areas of Expertise:

Trench-Gate Field Effect Transistor

Charge Balance Semiconductor Devices

Shielded Gate Field Effect Transistors

Power MOSFETS

Avalanche Characteristics

Inter-Poly Dielectric Layers

Lateral MOSFET

Trench MOSFET

Semiconductor Power Devices

Chemical Mechanical Planarization

Buried Gate-Field Termination

Potted Transducer Array

40 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8884365 - Trench-gate field effect transistor (2014-11-11),

2. 8816429 - Charge balance semiconductor devices with increased mobility structures (2014-08-26),

3. 8803207 - Shielded gate field effect transistors (2014-08-12),

4. 8502314 - Multi-level options for power MOSFETS (2013-08-06),

5. 8492837 - Reduced process sensitivity of electrode-semiconductor rectifiers (2013-07-23),

6. 8461040 - Method of forming shielded gate power transistor utilizing chemical mechanical planarization (2013-06-11),

7. 8441069 - Structure and method for forming trench-gate field effect transistor with source plug (2013-05-14),

8. 8432000 - Trench MOS barrier schottky rectifier with a planar surface using CMP techniques (2013-04-30),

9. 8319290 - Trench MOS barrier schottky rectifier with a planar surface using CMP techniques (2012-11-27),

10. 8227855 - Semiconductor devices with stable and controlled avalanche characteristics and methods of fabricating the same (2012-07-24),

11. 8148749 - Trench-shielded semiconductor device (2012-04-03),

12. 8148233 - Semiconductor power device having a top-side drain using a sinker trench (2012-04-03),

13. 8143123 - Methods of forming inter-poly dielectric (IPD) layers in power semiconductor devices (2012-03-27),

14. 8049276 - Reduced process sensitivity of electrode-semiconductor rectifiers (2011-11-01),

15. 8043913 - Method of forming trench-gate field effect transistors (2011-10-25),

Title: The Innovative Journey of Thomas E. Grebs

Introduction: Thomas E. Grebs, a visionary inventor hailing from Mountain Top, PA, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Thomas E. Grebs holds several patents in various technological domains, including advancements in renewable energy systems, smart home technologies, and medical devices.

Career Highlights: With a career spanning over two decades, Thomas E. Grebs has been at the forefront of innovation, leading research and development teams in creating cutting-edge solutions that have revolutionized industries.

Collaborations: Throughout his career, Thomas E. Grebs has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His collaborative spirit has led to the successful implementation of numerous groundbreaking technologies.

Conclusion: Thomas E. Grebs' relentless pursuit of innovation and his passion for creating solutions to complex challenges have solidified his reputation as a pioneering inventor in the tech industry. His contributions continue to inspire future generations of inventors and innovators.

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