The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 08, 2019
Filed:
Nov. 21, 2017
Texas Instruments Incorporated, Dallas, TX (US);
Osvaldo Jorge Lopez, Annandale, NJ (US);
Walter Hans Paul Schroen, Dallas, TX (US);
Jonathan Almeria Noquil, Bethlehem, PA (US);
Thomas Eugene Grebs, Bethlehem, PA (US);
Simon John Molloy, Allentown, PA (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A self-powered electronic system comprises a first chip () of single-crystalline semiconductor embedded in a second chip () of single-crystalline semiconductor shaped as a container bordered by ridges. The assembled chips are nested and form an electronic device assembled, in turn, in a slab of weakly p-doped low-grade silicon shaped as a container () bordered by ridges (). The flat side () of the slab includes a heavily n-doped region () forming a pn-junction () with the p-type bulk. A metal-filled deep silicon via () through the p-type ridge () connects the n-region with the terminal () on the ridge surface as cathode of the photovoltaic cell with the p-region as anode. The voltage across the pn-junction serves as power source of the device.