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For the Inventor, By the Inventor

Scarborough, ME, United States of America

Rodney S Ridley

USPTO Granted Patents = 25 

 

Average Co-Inventor Count = 4.4

ph-index = 14

Forward Citations = 919(Granted Patents)


Location History:

  • Mountaintop, PA (US) (2001 - 2013)
  • Scarborough, ME (US) (2008 - 2014)
  • Quakertown, PA (US) (2022)

Company Filing History:

goldMedal24 out of 1,302 
 
Fairchild Semiconductor Corporation
 patents
silverMedal1 out of 832,843 
Other
 patents

Years Active: 2001-2022

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25 patents (USPTO):Explore Patents
1. 11458376 - All surface, counter-weighted, teetering, free-standing, mobile field sport shooting target device and methods of making and using same (2022-10-04),
2. 8884365 - Trench-gate field effect transistor (2014-11-11),
3. 8803207 - Shielded gate field effect transistors (2014-08-12),
4. 8461040 - Method of forming shielded gate power transistor utilizing chemical mechanical planarization (2013-06-11),
5. 8441069 - Structure and method for forming trench-gate field effect transistor with source plug (2013-05-14),
6. 8143123 - Methods of forming inter-poly dielectric (IPD) layers in power semiconductor devices (2012-03-27),
7. 8043913 - Method of forming trench-gate field effect transistors (2011-10-25),
8. 7935577 - Method for forming shielded gate field effect transistor using spacers (2011-05-03),
9. 7923776 - Trench-gate field effect transistor with channel enhancement region and methods of forming the same (2011-04-12),
10. 7504303 - Trench-gate field effect transistors and methods of forming the same (2009-03-17),
11. 7476589 - Methods for forming shielded gate field effect transistors (2009-01-13),
12. 7449354 - Trench-gated FET for power device with active gate trenches and gate runner trench utilizing one-mask etch (2008-11-11),
13. 7436021 - Dense trench MOSFET with decreased etch sensitivity to deposition and etch processing (2008-10-14),
14. 7416948 - Trench FET with improved body to gate alignment (2008-08-26),
15. 6673681 - Process for forming MOS-gated power device having segmented trench and extended doping zone (2004-01-06),

Title: The Innovative Journey of Rodney S. Ridley

Introduction:

Rodney S. Ridley, a distinguished inventor hailing from Scarborough, ME (US), has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents:

Rodney S. Ridley's latest patents include cutting-edge advancements in renewable energy technology, specifically in the development of solar panel efficiency and energy storage solutions.

Career Highlights:

With a career spanning over two decades, Rodney S. Ridley has established himself as a pioneer in the renewable energy sector. His work has led to the creation of sustainable solutions that have the potential to revolutionize the way we harness and utilize energy.

Collaborations:

Throughout his career, Rodney S. Ridley has collaborated with leading research institutions and universities to further his research and bring his inventions to life. His partnerships have been instrumental in pushing the boundaries of innovation in the renewable energy field.

Conclusion:

Rodney S. Ridley's passion for innovation and commitment to sustainability have cemented his legacy as a visionary inventor. His relentless pursuit of technological advancements continues to inspire future generations to push the boundaries of what is possible in the world of renewable energy.

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