The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2012
Filed:
Mar. 03, 2008
Thomas E. Grebs, Mountaintop, PA (US);
Rodney S. Ridley, Mountaintop, PA (US);
Steven P. Sapp, Felton, PA (US);
Peter H. Wilson, Wrightwood, CA (US);
Babak S. Sani, Oakland, CA (US);
Gary M. Dolny, Mountaintop, PA (US);
John Mytych, Mohnton, PA (US);
Becky Losee, Cedar Hills, UT (US);
Adam Selsley, Mountaintop, PA (US);
Christopher B. Kocon, Plains, PA (US);
Thomas E. Grebs, Mountaintop, PA (US);
Rodney S. Ridley, Mountaintop, PA (US);
Steven P. Sapp, Felton, PA (US);
Peter H. Wilson, Wrightwood, CA (US);
Babak S. Sani, Oakland, CA (US);
Gary M. Dolny, Mountaintop, PA (US);
John Mytych, Mohnton, PA (US);
Becky Losee, Cedar Hills, UT (US);
Adam Selsley, Mountaintop, PA (US);
Christopher B. Kocon, Plains, PA (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A method for forming power semiconductor devices having an inter-electrode dielectric (IPD) layer inside a trench includes providing a semiconductor substrate with a trench, lining the sidewalls and bottom of the trench with a first layer of dielectric material, filling the trench with a first layer of conductive material to form a first electrode, recessing the first layer of dielectric material and the first layer of conductive material to a first depth inside the trench, forming a layer of polysilicon material on a top surface of the dielectric material and conductive material inside the trench, oxidizing the layer of polysilicon material, and forming a second electrode inside the trench atop the oxidized layer and isolated from trench sidewalls by a second dielectric layer. The oxidation step can be enhanced by either chemically or physically altering the top portion polysilicon such as by implanting impurities.