Becky Losee is a prominent inventor based in Cedar Hills, UT (US). She has made significant contributions to the field of power semiconductor devices, holding a total of 12 patents. Her work focuses on advancing technology that enhances the efficiency and performance of electronic devices.

Latest Patents

Among her latest patents, Becky has developed methods related to power semiconductor devices with thick bottom oxide layers. This method includes forming a drift region, a well region above the drift region, and an active trench that extends through the well region and into the drift region. Additionally, it involves forming a first source region in contact with one sidewall of the active trench and a second source region in contact with the opposite sidewall. Another notable patent is for a power device with self-aligned source regions, which features a field effect transistor (FET) that includes multiple trenches extending into a silicon layer. Each trench has upper sidewalls that fan out, and the design allows for self-aligned source regions that enhance the device's performance.

Career Highlights

Becky Losee has established herself as a key figure in her field through her innovative patents and contributions to power semiconductor technology. Her work at Fairchild Semiconductor Corporation has positioned her as a leader in developing advanced electronic components.

Collaborations

Throughout her career, Becky has collaborated with notable colleagues, including Dean E Probst and Robert Herrick. These partnerships have fostered an environment of innovation and have contributed to the success of her projects.

Conclusion

Becky Losee's contributions to the field of power semiconductor devices exemplify her dedication to innovation and technology. Her patents and collaborative efforts continue to influence the industry and pave the way for future advancements.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com