The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 24, 2002
Filed:
Feb. 12, 2001
Applicant:
Inventors:
Densen Cao, Sandy, UT (US);
Becky Losee, Lehi, UT (US);
Assignee:
Fairchild Semiconductor Corporation, South Portland, ME (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
A method for removing contaminants on a semiconductor substrate is disclosed. In one embodiment, the method includes forming a dielectric structure on the semiconductor substrate. A portion of an electrically conducting region to a side of the dielectric structure is etched, and a conductive material is deposited on the etched electrically conducting region.