The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Sep. 16, 2010
Applicants:
Robert Herrick, Lehi, UT (US);
Becky Losee, Cedar Hills, UT (US);
Dean Probst, West Jordan, UT (US);
Inventors:
Robert Herrick, Lehi, UT (US);
Becky Losee, Cedar Hills, UT (US);
Dean Probst, West Jordan, UT (US);
Assignee:
Fairchild Semiconductor Corporation, South Portland, ME (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of forming a semiconductor device includes the following. Removing portions of a silicon layer such that a trench having sidewalls which fan out near the top of the trench to extend directly over a portion of the silicon layer is formed in the silicon layer; and forming source regions in the silicon layer adjacent the trench sidewall such that the source regions extend into the portions of the silicon layer directly over which the trench sidewalls extend.