Robert Herrick

Title: The Innovative Contributions of Robert Herrick

Introduction

Robert Herrick is a notable inventor based in Lehi, UT (US), recognized for his significant contributions to the field of power semiconductor devices. With a total of 12 patents to his name, Herrick has made remarkable advancements that enhance the efficiency and functionality of electronic components.

Latest Patents

Among his latest patents, Herrick has developed methods related to power semiconductor devices with thick bottom oxide layers. This method involves forming a drift region and a well region above it, along with an active trench that extends through the well region and into the drift region. Additionally, it includes the formation of source regions in contact with the active trench's sidewalls and a charge control trench aligned parallel to the active trench. Another significant patent is for a power device with self-aligned source regions, which features a field effect transistor (FET) with trenches extending into a silicon layer. This design allows for self-aligned source regions that enhance the performance of the device.

Career Highlights

Herrick's career is marked by his innovative work at Fairchild Semiconductor Corporation, where he has played a crucial role in developing cutting-edge semiconductor technologies. His expertise in the field has led to numerous advancements that have had a lasting impact on the industry.

Collaborations

Throughout his career, Herrick has collaborated with talented individuals such as Dean E Probst and Becky Losee. These partnerships have fostered a creative environment that has contributed to the success of their projects.

Conclusion

Robert Herrick's contributions to the field of power semiconductor devices exemplify his innovative spirit and dedication to advancing technology. His patents reflect a deep understanding of semiconductor design and functionality, making him a valuable asset to the industry.