The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2012
Filed:
Feb. 15, 2008
Ashok Challa, Sandy, UT (US);
Alan Elbanhawy, Hollister, CA (US);
Dean E. Probst, West Jordan, UT (US);
Steven P. Sapp, Felton, CA (US);
Peter H. Wilson, Wrightwood, CA (US);
Babak S. Sani, Oakland, CA (US);
Becky Losee, Cedar Hills, UT (US);
Robert Herrick, Lehi, UT (US);
James J. Murphy, South Jordan, UT (US);
Gordon K. Madson, Riverton, UT (US);
Bruce D. Marchant, Murray, UT (US);
Christopher B. Kocon, Plains, PA (US);
Debra S. Woolsey, Draper, UT (US);
Ashok Challa, Sandy, UT (US);
Alan Elbanhawy, Hollister, CA (US);
Dean E. Probst, West Jordan, UT (US);
Steven P. Sapp, Felton, CA (US);
Peter H. Wilson, Wrightwood, CA (US);
Babak S. Sani, Oakland, CA (US);
Becky Losee, Cedar Hills, UT (US);
Robert Herrick, Lehi, UT (US);
James J. Murphy, South Jordan, UT (US);
Gordon K. Madson, Riverton, UT (US);
Bruce D. Marchant, Murray, UT (US);
Christopher B. Kocon, Plains, PA (US);
Debra S. Woolsey, Draper, UT (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A method of manufacturing a semiconductor device having a charge control trench and an active control trench with a thick oxide bottom includes forming a drift region, a well region extending above the drift region, an active trench extending through the well region and into the drift region, a charge control trench extending deeper into the drift region than the active trench, an oxide film that fills the active trench, the charge control trench and covers a top surface of the substrate, an electrode in the active trench, and source regions. The method also includes etching the oxide film off the top surface of the substrate and inside the active trench to leave a substantially flat layer of thick oxide having a target thickness at the bottom of the active trench.