Company Filing History:
Years Active: 2012-2015
Title: Debra S Woolsey: Innovator in Power Semiconductor Devices
Introduction
Debra S Woolsey is a prominent inventor based in Draper, UT (US). She has made significant contributions to the field of power semiconductor devices, holding a total of 2 patents. Her innovative methods have advanced the technology used in semiconductor manufacturing.
Latest Patents
Debra's latest patents focus on methods related to power semiconductor devices with thick bottom oxide layers. One of her methods includes forming a drift region, a well region above the drift region, and an active trench extending through the well region and into the drift region. This method also involves forming a first source region in contact with a first sidewall of the active trench and a second source region in contact with a second sidewall of the active trench. Additionally, it includes forming a charge control trench aligned parallel to the active trench, laterally separated by a mesa region, ensuring that the portion of the well region is in contact with the charge control trench while excluding any source region. Another patent details a method of manufacturing a semiconductor device that includes a charge control trench and an active control trench with a thick oxide bottom, emphasizing the importance of a substantially flat layer of thick oxide at the bottom of the active trench.
Career Highlights
Debra S Woolsey has been instrumental in her role at Fairchild Semiconductor Corporation, where she has applied her expertise in semiconductor technology. Her work has not only contributed to the company's advancements but has also set a benchmark in the industry for innovative semiconductor solutions.
Collaborations
Throughout her career, Debra has collaborated with notable colleagues such as Ashok Challa and Alan Elbanhawy. These partnerships have fostered a creative environment that has led to groundbreaking developments in semiconductor technology.
Conclusion
Debra S Woolsey's contributions to the field of power semiconductor devices exemplify her innovative spirit and dedication to advancing technology. Her patents and collaborative efforts continue to influence the semiconductor industry positively.