The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 20, 2015
Filed:
Mar. 12, 2012
Ashok Challa, Sandy, UT (US);
Alan Elbanhawy, Hollister, CA (US);
Dean E. Probst, West Jordan, UT (US);
Steven P. Sapp, Felton, CA (US);
Peter H. Wilson, Wrightwood, CA (US);
Babak S. Sani, Oakland, CA (US);
Becky Losee, Cedar Hills, UT (US);
Robert Herrick, Lehi, UT (US);
James J. Murphy, South Jordan, UT (US);
Gordon K. Madson, Riverton, UT (US);
Bruce D. Marchant, Murray, UT (US);
Christopher B. Kocon, Murray, PA (US);
Debra S. Woolsey, Draper, UT (US);
Ashok Challa, Sandy, UT (US);
Alan Elbanhawy, Hollister, CA (US);
Dean E. Probst, West Jordan, UT (US);
Steven P. Sapp, Felton, CA (US);
Peter H. Wilson, Wrightwood, CA (US);
Babak S. Sani, Oakland, CA (US);
Becky Losee, Cedar Hills, UT (US);
Robert Herrick, Lehi, UT (US);
James J. Murphy, South Jordan, UT (US);
Gordon K. Madson, Riverton, UT (US);
Bruce D. Marchant, Murray, UT (US);
Christopher B. Kocon, Murray, PA (US);
Debra S. Woolsey, Draper, UT (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A method can include forming a drift region, forming a well region above the drift region, and forming an active trench extending through the well region and into the drift region. The method can include forming a first source region in contact with a first sidewall of the active trench and a second source region in contact with a second sidewall of the active trench. The method also includes forming a charge control trench where the charge control trench is aligned parallel to the active trench and laterally separated from the active trench by a mesa region, and where the portion of the well region is in contact with the charge control trench and excludes any source region. The method also includes forming an oxide along a bottom of the active trench having a thickness greater than a thickness of an oxide along the first sidewall of the active trench.