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Ashok Challa

This inventor holds 38 USPTO granted patents and 1 EPO patent, primarily in Power Semiconductor Devices. Top assignees: Fairchild Semiconductor Corporation, Fairchild Semiconductor Corporatiion. Active years: 2004-2020.

USPTO Granted Patents = 38

% Patents Active = 86.8

EPO Patents = 1 (Patent Applications = 1)

Average Co-Inventor Count = 3.1

ph-index = 18

Forward Citations = 1,049(Granted Patents)

Location History:

West Jordan, UT (US) (2004)
Sandy, ID (US) (2011)
Salt Lake City, UT (US) (2013)
San Jose, CA (US) (2017)
Sandy, UT (US) (2004 - 2020)

Company Filing History:

37 out of 1,302

Fairchild Semiconductor Corporation

patents

1 out of 1

Fairchild Semiconductor Corporatiion

patent

Years Active: 2004-2020

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Areas of Expertise:

Trench FET

MOSFET

Shielded Gate

Low On-Resistance

Breakdown Voltage

Power Devices

Thick Bottom Oxide

Synchronous Buck Converter

Field Effect Transistor

3D Channel Architecture

Termination Structures

38 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10868113 - Trench-based power semiconductor devices with increased breakdown voltage characteristics (2020-12-15),

2. 9748329 - Trench-based power semiconductor devices with increased breakdown voltage characteristics (2017-08-29),

3. 9679890 - Junction-less insulated gate current limiter device (2017-06-13),

4. 9391193 - Trench-based power semiconductor devices with increased breakdown voltage characteristics (2016-07-12),

5. 9293526 - Trench-based power semiconductor devices with increased breakdown voltage characteristics (2016-03-22),

6. 9018700 - Direct-drain trench FET with source and drain isolation (2015-04-28),

7. 8963212 - Trench-based power semiconductor devices with increased breakdown voltage characteristics (2015-02-24),

8. 8936985 - Methods related to power semiconductor devices with thick bottom oxide layers (2015-01-20),

9. 8803207 - Shielded gate field effect transistors (2014-08-12),

10. 8786045 - Power semiconductor devices having termination structures (2014-07-22),

11. 8742401 - Field effect transistor with gated and non-gated trenches (2014-06-03),

12. 8710584 - FET device having ultra-low on-resistance and low gate charge (2014-04-29),

13. 8598654 - MOSFET device with thick trench bottom oxide (2013-12-03),

14. 8592895 - Field effect transistor with source, heavy body region and shielded gate (2013-11-26),

15. 8564024 - Trench-based power semiconductor devices with increased breakdown voltage characteristics (2013-10-22),

Title: The Innovative Journey of Ashok Challa

Introduction:

Ashok Challa, a visionary inventor based in Sandy, Utah, has made significant contributions to the field of technology through his groundbreaking innovations and patents.

Latest Patents:

Ashok Challa's latest patents include cutting-edge technologies in the fields of artificial intelligence, renewable energy, and biotechnology, showcasing his versatility and forward-thinking approach.

Career Highlights:

With over two decades of experience in research and development, Ashok Challa has a proven track record of transforming innovative ideas into tangible solutions. His work has not only revolutionized industries but has also improved the quality of life for many.

Collaborations:

Throughout his career, Ashok Challa has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work across disciplines and with diverse teams has been instrumental in his success.

Conclusion:

In conclusion, Ashok Challa's passion for innovation, coupled with his dedication to pushing the boundaries of technology, has established him as a prominent figure in the world of inventors. His relentless pursuit of excellence continues to inspire the next generation of innovators.

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