The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Mar. 16, 2011
Applicants:
Chanho Park, Pleasanton, CA (US);
Ashok Challa, Salt Lake City, UT (US);
Ritu Sodhi, Maharashtra, IN (US);
Inventors:
Chanho Park, Pleasanton, CA (US);
Ashok Challa, Salt Lake City, UT (US);
Ritu Sodhi, Maharashtra, IN (US);
Assignee:
Fairchild Semiconductor Corporation, South Portland, ME (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
In one general aspect, an apparatus can include a first trench oxide disposed within a first trench of an epitaxial layer and having a trench bottom oxide disposed below a gate portion of the first trench oxide. The apparatus can include a second trench disposed lateral to the first trench. The trench bottom oxide portion of the first oxide can have a thickness greater than a distance within the epitaxial layer from the first trench to the second trench.