Ritu Sodhi

Title: Ritu Sodhi: Innovator in Semiconductor Technology

Introduction

Ritu Sodhi is a prominent inventor based in Pune, India, known for her contributions to semiconductor technology. With a total of 3 patents to her name, she has made significant advancements in the field, particularly in the development of MOSFET devices.

Latest Patents

One of her latest patents is the "MOSFET device with thick trench bottom oxide." This invention includes an apparatus featuring a first trench oxide within an epitaxial layer, which has a trench bottom oxide positioned below the gate portion of the first trench oxide. Additionally, the apparatus includes a second trench located laterally to the first trench. The trench bottom oxide portion of the first oxide is designed to have a thickness greater than the distance within the epitaxial layer from the first trench to the second trench. Another notable patent is the "Double layer metal (DLM) power MOSFET," which discusses a semiconductor device that includes a first metal layer connected to a source region and a second metal layer linked to a gate structure, with portions of both metal layers overlapping vertically.

Career Highlights

Ritu currently works at Fairchild Semiconductor Corporation, where she continues to innovate and contribute to the semiconductor industry. Her work has been instrumental in enhancing the performance and efficiency of semiconductor devices.

Collaborations

Throughout her career, Ritu has collaborated with talented individuals such as Christopher Lawrence Rexer and Rohit Dikshit, further enriching her work and contributions to the field.

Conclusion

Ritu Sodhi stands out as a significant figure in semiconductor technology, with her innovative patents and collaborative efforts driving advancements in the industry. Her work continues to influence the development of efficient semiconductor devices.