Fairchild Semiconductor Corporation

Ritu Sodhi

Christopher Lawrence Rexer

Joseph Andrew Yedinak

Ashok Challa

Chanho Park

Mark L Rinehimer

Michael D Gruenhagen

Fred Session

Dan Kinzer

Rohit Dikshit

Tracie Petersen

In one general aspect, an apparatus can include a first trench oxide disposed within a first trench of an epitaxial layer and having a trench bottom oxide disposed below a gate portion of the first trench oxide. The apparatus can include a second trench disposed lateral to the first trench. The trench bottom oxide portion of the first oxide can have a thickness greater than a distance within the epitaxial layer from the first trench to the second trench.

MOSFET device with thick trench bottom oxide

This document discusses, among other things, a semiconductor device including a first metal layer coupled to a source region and a second metal layer coupled to a gate structure, wherein at least a portion of the first and second metal layers overlap vertically.

Double layer metal (DLM) power MOSFET

A semiconductor device includes a drift region, a well region extending above the drift region, an active trench including sidewalls and a bottom, the active trench extending through the well region and into the drift region and having at least portions of its sidewalls and bottom lined with dielectric material. The device further includes a shield disposed within the active trench and separated from the sidewalls of the active trench by the dielectric material, a gate disposed within the active trench above the first shield and separated therefrom by inter-electrode dielectric material, and source regions formed in the well region adjacent the active trench. The gate is separated from the sidewalls of the active trench by the dielectric material. The shield and the gate are made of materials having different work functions.

Trench power MOSFET with reduced on-resistance

Growing community of inventors

Pune, India

Ritu Sodhi