The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2017
Filed:
Mar. 26, 2015
Applicant:
Fairchild Semiconductor Corporation, South Portland, ME (US);
Inventors:
Joseph A. Yedinak, Mountain Top, PA (US);
Ashok Challa, Sandy, UT (US);
Assignee:
Fairchild Semiconductor Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01); H01L 29/739 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 29/0696 (2013.01); H01L 29/407 (2013.01); H01L 29/7397 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01); H01L 29/7827 (2013.01); H01L 29/872 (2013.01); H01L 29/8725 (2013.01); H01L 29/0619 (2013.01); H01L 29/0638 (2013.01); H01L 29/1095 (2013.01); H01L 29/402 (2013.01); H01L 29/41741 (2013.01); H01L 29/41766 (2013.01); H01L 29/4238 (2013.01); H01L 29/42368 (2013.01); H01L 29/42372 (2013.01);
Abstract
Exemplary power semiconductor devices with features providing increased breakdown voltage and other benefits are disclosed.