The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2014

Filed:

Sep. 09, 2010
Applicants:

Ashok Challa, Sandy, UT (US);

Jaegil Lee, Puchon-Si, KR;

Jinyoung Jung, Kyunggi-do, KR;

Hocheol Jang, Kyoungki-do, KR;

Inventors:

Ashok Challa, Sandy, UT (US);

Jaegil Lee, Puchon-Si, KR;

Jinyoung Jung, Kyunggi-do, KR;

Hocheol Jang, Kyoungki-do, KR;

Assignee:

Fairchild Semiconductor Corporation, South Portland, ME (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract

In one general aspect, a termination structure can include a plurality of pillars of a first conductivity type formed inside a termination region of a second conductivity type opposite the first conductivity type where the plurality of pillars define a plurality of concentric rings surrounding an active area of a semiconductor device. The termination structure can include a conductive field plate where the plurality of pillars includes a first pillar coupled to the conductive field plate. The termination structure can include a dielectric layer where the plurality of pillars include a second pillar insulated by the dielectric layer from a portion of the conductive field plate disposed directly above the second pillar included in the plurality of pillars.


Find Patent Forward Citations

Loading…