Bruce Douglas Marchant

This inventor holds 25 USPTO granted patents, primarily in Power Semiconductor Devices. Top assignee: Fairchild Semiconductor Corporation. Active years: 2000-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bruce Douglas Marchant. Retrieved from https://idiyas.com/inventor/bruce-douglas-marchant

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 25

% Patents Active = 88.0

Average Co-Inventor Count = 2.4

ph-index = 13

Forward Citations = 629(Granted Patents)

Location History:

Salt Lake, UT (US) (2000)
Murray, UT (US) (2004 - 2015)

Company Filing History:

25 out of 1,302

Fairchild Semiconductor Corporation

patents

Years Active: 2000-2015

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Areas of Expertise:

Trench-Gate FET

Power Semiconductor

LDMOS

Field Effect Transistor

Backside Drain

Thick Bottom Oxide

Self-Aligned

Integrated Schottky Diode

Lateral Depletion

High Density

Active Gate Trenches

Clamping Voltage Control

25 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8936985 - Methods related to power semiconductor devices with thick bottom oxide layers (2015-01-20),

2. 8884365 - Trench-gate field effect transistor (2014-11-11),

3. 8829641 - Method of forming a dual-trench field effect transistor (2014-09-09),

4. 8536042 - Method of forming a topside contact to a backside terminal of a semiconductor device (2013-09-17),

5. 8450177 - LDMOS with self aligned vertical LDD backside drain (2013-05-28),

6. 8441069 - Structure and method for forming trench-gate field effect transistor with source plug (2013-05-14),

7. 8143124 - Methods of making power semiconductor devices with thick bottom oxide layer (2012-03-27),

8. 8043913 - Method of forming trench-gate field effect transistors (2011-10-25),

9. 7998819 - Lateral drain MOSFET with improved clamping voltage control (2011-08-16),

10. 7936007 - LDMOS with self aligned vertical LDD backside drain (2011-05-03),

11. 7923776 - Trench-gate field effect transistor with channel enhancement region and methods of forming the same (2011-04-12),

12. 7902071 - Method for forming active and gate runner trenches (2011-03-08),

13. 7884390 - Structure and method of forming a topside contact to a backside terminal of a semiconductor device (2011-02-08),

14. 7781835 - Lateral drain MOSFET with improved clamping voltage control (2010-08-24),

15. 7772642 - Power trench gate FET with active gate trenches that are contiguous with gate runner trench (2010-08-10),

Title: The Innovative Journey of Bruce Douglas Marchant

Introduction: Bruce Douglas Marchant, a talented inventor hailing from Murray, UT (US), has made significant contributions to the world of innovations with his creative mind and dedication to problem-solving.

Latest Patents: Bruce Douglas Marchant holds several patents in various fields, showcasing his versatility and ingenuity in inventing new solutions to existing challenges.

Career Highlights: Throughout his career, Bruce Douglas Marchant has demonstrated a keen ability to identify gaps in the market and develop groundbreaking inventions to fill those voids. His passion for innovation has led to the successful commercialization of several of his patented ideas.

Collaborations: Bruce Douglas Marchant has collaborated with leading research institutions, universities, and companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of many projects.

Conclusion: Bruce Douglas Marchant's relentless pursuit of innovation and his commitment to pushing the boundaries of what is possible make him a true pioneer in the world of inventions. His impact on various industries is undeniable, and his legacy as an inventor continues to inspire future generations of innovators.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]