The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Mar. 29, 2011
Hamza Yilmaz, Saratoga, CA (US);
Daniel Calafut, San Jose, CA (US);
Christopher Boguslaw Kocon, Mountaintop, PA (US);
Steven P. Sapp, Santa Cruz, CA (US);
Dean E. Probst, West Jordan, UT (US);
Nathan L. Kraft, Pottsville, PA (US);
Thomas E. Grebs, Mountaintop, PA (US);
Rodney S. Ridley, Scarborough, ME (US);
Gary M. Dolny, Mountaintop, PA (US);
Bruce D. Marchant, Murray, UT (US);
Joseph A. Yedinak, Mountaintop, PA (US);
Hamza Yilmaz, Saratoga, CA (US);
Daniel Calafut, San Jose, CA (US);
Christopher Boguslaw Kocon, Mountaintop, PA (US);
Steven P. Sapp, Santa Cruz, CA (US);
Dean E. Probst, West Jordan, UT (US);
Nathan L. Kraft, Pottsville, PA (US);
Thomas E. Grebs, Mountaintop, PA (US);
Rodney S. Ridley, Scarborough, ME (US);
Gary M. Dolny, Mountaintop, PA (US);
Bruce D. Marchant, Murray, UT (US);
Joseph A. Yedinak, Mountaintop, PA (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A method of forming a field effect transistor includes: forming a trench in a semiconductor region; forming a shield electrode in the trench; performing an angled sidewall implant of impurities of the first conductivity type to form a channel enhancement region adjacent the trench; forming a body region of a second conductivity type in the semiconductor region; and forming a source region of the first conductivity type in the body region, the source region and an interface between the body region and the semiconductor region defining a channel region therebetween, the channel region extending along the trench sidewall. The channel enhancement region partially extends into a lower portion of the channel region to thereby reduce a resistance of the channel region.