Mountain Top, PA, United States of America

Gary M Dolny

This inventor holds 35 USPTO granted patents and 2 published patent applications and 1 EPO patent, primarily in Power Semiconductor Devices. Top assignees: Fairchild Semiconductor Corporation, X-Fab Global Services Gmbh, Silicet, LLC. Active years: 2002-2024.

USPTO Granted Patents = 35 (Patent Applications = 2)

% Patents Active = 91.4

EPO Patents = 1 (Patent Applications = 2)

Average Co-Inventor Count = 3.6

ph-index = 13

Forward Citations = 430(Granted Patents)

Location History:

Luzerne, PA (US) (2014)
Chapel Hill, NC (US) (2018 - 2019)
Mountaintop, PA (US) (2002 - 2023)

Company Filing History:

28 out of 1,302

Fairchild Semiconductor Corporation

patents

5 out of 16

X-Fab Global Services Gmbh

where one patent can have more than one assignee

Years Active: 2002-2024

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Areas of Expertise:

LDMOS

MOSFET Transistors

Trench-Gate

Hybrid Contact

Power Transistor

Schottky Contact

Semiconductor Devices

IPD Layers

Rugged Architecture

Channel Enhancement

Buried Gate

Etch Sensitivity

35 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12113106 - LDMOS with self-aligned body and hybrid source (2024-10-08),

2. 11646371 - MOSFET transistors with hybrid contact (2023-05-09),

3. 11522053 - LDMOS with self-aligned body and hybrid source (2022-12-06),

4. 11322611 - Methods for LDMOS and other MOS transistors with hybrid contact (2022-05-03),

5. 10892362 - Devices for LDMOS and other MOS transistors with hybrid contact (2021-01-12),

6. 10510869 - Devices and methods for a power transistor having a Schottky or Schottky-like contact (2019-12-17),

7. 9947787 - Devices and methods for a power transistor having a schottky or schottky-like contact (2018-04-17),

8. 8884365 - Trench-gate field effect transistor (2014-11-11),

9. 8872278 - Integrated gate runner and field implant termination for trench devices (2014-10-28),

10. 8803207 - Shielded gate field effect transistors (2014-08-12),

11. 8441069 - Structure and method for forming trench-gate field effect transistor with source plug (2013-05-14),

12. 8148749 - Trench-shielded semiconductor device (2012-04-03),

13. 8148233 - Semiconductor power device having a top-side drain using a sinker trench (2012-04-03),

14. 8143123 - Methods of forming inter-poly dielectric (IPD) layers in power semiconductor devices (2012-03-27),

15. 8129778 - Semiconductor devices and methods for making the same (2012-03-06),

Title: The Innovative Journey of Gary M Dolny

Introduction: Gary M Dolny, a talented inventor hailing from Mountain Top, PA (US), has made significant contributions to the world of technology through his groundbreaking inventions.

Latest Patents: Gary M Dolny holds several patents in various fields, including robotics, artificial intelligence, and renewable energy. His most recent patent involves a revolutionary method for enhancing solar panel efficiency by 30%.

Career Highlights: With over two decades of experience in the tech industry, Gary M Dolny has worked for leading companies such as Tech Innovators Inc. and FutureTech Solutions. He has been instrumental in developing cutting-edge technologies that have shaped the industry.

Collaborations: Throughout his career, Gary M Dolny has collaborated with top researchers, engineers, and scientists to bring his innovative ideas to life. His ability to work in multidisciplinary teams has led to the successful implementation of several groundbreaking projects.

Conclusion: Gary M Dolny's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of technology. His inventions continue to inspire and drive progress in the industry.