The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 03, 2012

Filed:

Jul. 07, 2011
Applicants:

Thomas E. Grebs, Mountaintop, PA (US);

Gary M. Dolny, Mountaintop, PA (US);

Inventors:

Thomas E. Grebs, Mountaintop, PA (US);

Gary M. Dolny, Mountaintop, PA (US);

Assignee:

Fairchild Semiconductor Corporation, South Portland, ME (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/113 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor power device includes a plurality of groups of stripe-shaped gate trenches extending in a silicon region over a substrate, and a plurality of stripe-shaped sinker trenches each extending between two adjacent groups of the plurality of groups of stripe-shaped gate trenches. The plurality of stripe-shaped sinker trenches extend from a top surface of the silicon region through the silicon region and terminate within the substrate. The plurality of stripe-shaped sinker trenches are lined with an insulator along the sinker trench sidewalls so that a conductive material filling each sinker trench makes electrical contact with the substrate along the bottom of the sinker trench and makes electrical contact with an interconnect layer along the top of the sinker trench.


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