The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Oct. 25, 2011
Applicants:
Jifa Hao, Scarborough, ME (US);
Gary Dolny, Luzerne, PA (US);
Mark Rioux, Saco, ME (US);
Inventors:
Assignee:
Fairchild Semiconductor Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0619 (2013.01); H01L 29/7811 (2013.01); H01L 29/66727 (2013.01); H01L 29/7813 (2013.01); H01L 29/4238 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01); H01L 29/0696 (2013.01); H01L 29/41766 (2013.01); H01L 29/42372 (2013.01);
Abstract
In one general aspect, an apparatus can include a plurality of trench metal-oxide-semiconductor field effect transistors (MOSFET) devices formed within an epitaxial layer of a substrate, and a gate-runner trench disposed around the plurality of trench MOSFET devices and disposed within the epitaxial layer. The apparatus can also include a floating-field implant defined by a well implant and disposed around the gate-runner trench.