The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
Oct. 21, 2011
Hamza Yilmaz, Saratoga, CA (US);
Daniel Calafut, San Jose, CA (US);
Christopher Boguslaw Kocon, Mountaintop, PA (US);
Steven P. Sapp, Santa Cruz, CA (US);
Dean E. Probst, West Jordan, UT (US);
Nathan L. Kraft, Pottsville, PA (US);
Thomas E. Grebs, Mountaintop, PA (US);
Rodney S. Ridley, Scarborough, ME (US);
Gary M. Dolny, Mountaintop, PA (US);
Bruce D. Marchant, Murray, UT (US);
Joseph A. Yedinak, Mountaintop, PA (US);
Hamza Yilmaz, Saratoga, CA (US);
Daniel Calafut, San Jose, CA (US);
Christopher Boguslaw Kocon, Mountaintop, PA (US);
Steven P. Sapp, Santa Cruz, CA (US);
Dean E. Probst, West Jordan, UT (US);
Nathan L. Kraft, Pottsville, PA (US);
Thomas E. Grebs, Mountaintop, PA (US);
Rodney S. Ridley, Scarborough, ME (US);
Gary M. Dolny, Mountaintop, PA (US);
Bruce D. Marchant, Murray, UT (US);
Joseph A. Yedinak, Mountaintop, PA (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A field effect transistor includes a gate trench extending into a semiconductor region. The gate trench has a recessed gate electrode disposed therein. A source region in the semiconductor region flanks each side of the gate trench. A conductive material fills an upper portion of the gate trench so as to make electrical contact with the source regions along upper sidewalls of the gate trench. The conductive material is insulated from the recessed gate electrode.